JPS6244819B2 - - Google Patents

Info

Publication number
JPS6244819B2
JPS6244819B2 JP55158548A JP15854880A JPS6244819B2 JP S6244819 B2 JPS6244819 B2 JP S6244819B2 JP 55158548 A JP55158548 A JP 55158548A JP 15854880 A JP15854880 A JP 15854880A JP S6244819 B2 JPS6244819 B2 JP S6244819B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
gate electrode
semiconductor
forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55158548A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5783059A (en
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55158548A priority Critical patent/JPS5783059A/ja
Publication of JPS5783059A publication Critical patent/JPS5783059A/ja
Publication of JPS6244819B2 publication Critical patent/JPS6244819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP55158548A 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device Granted JPS5783059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55158548A JPS5783059A (en) 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158548A JPS5783059A (en) 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5783059A JPS5783059A (en) 1982-05-24
JPS6244819B2 true JPS6244819B2 (en]) 1987-09-22

Family

ID=15674108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158548A Granted JPS5783059A (en) 1980-11-11 1980-11-11 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5783059A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065754B2 (ja) * 1983-03-31 1994-01-19 富士通株式会社 半導体装置
JPH0729320B2 (ja) * 1986-10-31 1995-04-05 日本ゼオン株式会社 反応射出成形方法
JPH05211166A (ja) * 1991-12-02 1993-08-20 Nec Corp 薄膜電界効果型トランジスタ
WO2001097290A2 (en) * 2000-06-16 2001-12-20 Advanced Micro Devices, Inc. Buried inverted gate field-effect transistor (bigfet)

Also Published As

Publication number Publication date
JPS5783059A (en) 1982-05-24

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